歡迎加入2D group,課題組的主要研究方向是研究低維材料(2-D Monolayer、1-D Nanowires、o-D QDs)、光吸收材料、生物材料及其復合材料的結構、物性及新型器件構建,特別關注材料的光電響應、光電晶體管、光伏器件等研究。課題組與昆明物理所、中科院上海技術物理研究所、復旦大學、澳大利亞Swinburne University of Technology、美國University of Houston、加拿大University of Toronto等合作密切。同時擔任Nanoscal、Scientific Reports、Nanotechnology、Journal of Physics D: Applied Physics、Journal of Applied Physics等雜志的審稿人。目前已主持青年基金、省面上項目、中科院合作項目等多項縱向課題;2018年度入選云南大學“中青年骨干教師培養(yǎng)計劃”。實驗室已具備材料制備(多臺CVD及惰性環(huán)境制備室)和測試表征手段,歡迎優(yōu)秀學子加盟。
1.Ling Tong, Feng Qiu*, Pan Wang, Tao Huang, Anran Chen, Xiaohao Zhou, Jia Long, Rongfei Wang, Jie Yang, Chong Wang,and Yu Yang, Highly tunable doping in Ge quantum dots graphene composite with distinct QD growth evolution, Nanotechnology,2019, DOI: 10.1088/1361-6528/ab029e.
2.Tong Ling ; Qiu Feng*; Zeng Tianjian; Long Jia; Yang Jie; Wang Rongfei; Zhang Jin; Wang Chong; Sun Tao; Yang Yu, Recent progress in the preparation and application of quantum dots/graphene composite materials , RSC Advances, 2017, 7(76): 47999~48018
3.Li, Hui-Song ; Qiu, Feng*; Xin, Zheng-Hang; Wang, Rong-Fei; Jie Yang;Jin Zhang; Chong Wang; Yu Yang, Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing, Japanese Journal of Applied Physics, 2016, 55(6): 61302
4.F. Qiu*, W. Qiu, Y. Li, X. Wang, Y. Zhang, X. Zhou, Y. Lv, Y. Sun, H. Deng, S. Hu, An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots, Nanotechnology, 2016,27 (6):065602.
5.Qiu Feng, Xiang Jinzhong, Kong Jincheng, Yu Lianjie, Kong Lingde, Wang Guanghua, Li Xiongjun, Yang Lili, Li Cong and Ji Rongbin. Dark conductivity and photoconductivity of amorphous Hg0.78Cd 0.22Te thin films.2011 J. Semicond. 32(3):033004。
6.F. Qiu,Y. F. Lv,J. H. Guo,Y. Sun,H. Y. Deng,S. H. Hu and N. Dai, Growth andRaman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy,Chin. Opt. Lett., 2012, 10(s2): pp.S21603 .
7.F. Qiu,Y.Zhang,Y. F. Lv,J. H. Guo,G. J.Hu,Y. Sun,H. Y. Deng,S. H. Hu and N.Dai,Growth,structure and optical properties of GaSb quantum dot by liquid phaseepitaxy technique, Nanoelectronics Conference (INEC).IEEE 5th International, 2013, pp.203 – 204.